12-inch Wafer Plasma Dicing Equipment
This equipment is used for plasma cutting of semiconductor wafers.
Equipment Advantages
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01Dual ion source ICP (Inductively Coupled Plasma) etching chamber design, ensuring high etching uniformity
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02Dual-electrode electrostatic chuck adsorption design, featuring strong adsorption force and excellent product temperature control performance
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03Inline multi-chamber simultaneous operation, achieving high productivity
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04High-precision vacuum transfer arm, ensuring high safety in product handling
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05Double-layer gas baffle design, improving the adjustability of plasma uniformity
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06Infrared detection design for product temperature, providing over-temperature protection to enhance product safety
Equipment Picture
Basic Parameters
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1. Applicable Products： 4~12 inch silicon wafers
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2. Operation Mode：Fully automatic